型号:

IXTA200N085T7

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 85V 200A TO-263-7
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXTA200N085T7 PDF
产品目录绘图 TO-263-7 Package
标准包装 50
系列 TrenchMV™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 85V
电流 - 连续漏极(Id) @ 25° C 200A
开态Rds(最大)@ Id, Vgs @ 25° C 5 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 152nC @ 10V
输入电容 (Ciss) @ Vds 7600pF @ 25V
功率 - 最大 480W
安装类型 表面贴装
封装/外壳 TO-263-7,D²Pak(6 引线+接片),TO-263CB
供应商设备封装 TO-263-7
包装 管件
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